Stability Evaluation of Insulated Gate AlGaN/GaN Power Switching Devices Under Heavy-Ion Irradiation

Depletion mode insulated gate AlGaN/GaN power switching HEMTs were evaluated for stability under heavy-ion irradation. Experiments were performed for different types of heavy-ion species, values of gate bias, drain bias, and device geometry. For the insulated gate AlGaN/GaN devices, an as-of-yet unobserved single-event occurred, which we have termed single-event switching (SES). These SES events o...