Increase in the Heavy-Ion Upset Cross Section of Floating Gate Cells Previously Exposed to TID

Electronic chips working in the space environment are constantly subject to both single event and total ionizing dose effects. To emulate this scenario for Flash memories, we tested under heavy ions floating gate cells, previously irradiated with x-rays, without performing any erase and program operation in between the two exposures. We observed an increase in the heavy-ion upset cross section in ...