Diode-Pumped Passively Mode-Locked Nd:Luvo4 Laser With Lt-In0.25ga0.75as Saturable Absorber

T. Li,S. Zhao, Y. Li, Z. Zhuo,K. Yang,G. Li,D. Li, Z. Yu

Laser Physics Letters(2009)

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摘要
A diode pumped passively mode-locked Nd:LuVO4 laser with a low temperature (J) In0.25Ga0.75As absorber is realized in this paper. An In0.25Ga0.75. As single-quantum-well absorber, which is grown by use of the metal-organic chemical-vapor deposition technique, acts as nonlinear absorber and output coupler simultaneously. A special cavity is designed to keep the power density on In0.25Ga0.75As under its damage threshold. Both the Q-switched and continuous-wave (cw) mode locking operation are experimentally realized. An average output power of 5.9 W with pulse width of 4.9 ps is achieved at the pump power of 22 W, corresponding to an optical conversion efficiency of 26.8%.
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关键词
diode-pumped lasers, Nd:LuVO4 crystal, mode locked laser
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