Vertical-Injection AlGaInP LEDs with n-AlGaInP Nanopillars Fabricated by Self-Assembled ITO-Based Nanodots

Nanoscale research letters, Volume 10, Issue 1, 2015, Pages 356

Cited by: 29|Bibtex|Views3|DOI:https://doi.org/10.1186/s11671-015-1064-3
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Other Links: academic.microsoft.com|pubmed.ncbi.nlm.nih.gov|link.springer.com

Abstract:

The light output power of AlGaInP-based vertical-injection light-emitting diodes (VI-LEDs) can be enhanced significantly using n-AlGaInP nanopillars. n-AlGaInP nanopillars, ~200 nm in diameter, were produced using SiO2 nanopillars as an etching mask, which were fabricated from self-assembled tin-doped indium oxide (ITO)-based nanodots for...More

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