Bottom Electrode Modification of ZrO2 Resistive Switching Memory Device with Au Nanodots

JAPANESE JOURNAL OF APPLIED PHYSICS, 2012.

Cited by: 4|Bibtex|Views0|DOI:https://doi.org/10.1143/JJAP.51.02BJ04
Other Links: academic.microsoft.com

Abstract:

The resistive switching properties of the ZrO2 memory devices with bottom electrode modification by using Au nanodots are investigated in this study. The regular arrays of Au nanodots are fabricated on Pt bottom electrode by nanosphere lithography. Due to the tip of the Au nanodots on the Pt bottom electrode, it causes the higher electric...More

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