Inhomogeneous Microstructure and Electrical Transport Properties at the Laalo3/Srtio3 Interface
Japanese journal of applied physics(2012)
摘要
Medium-energy ion spectroscopy (MEIS), scanning transmission electron microscopy (STEM) and X-ray photoemission spectroscopy (XPS) were used to investigate the composition and microstructure of LaAlO3/SrTiO3 (LAO/STO) interfaces grown by pulsed laser deposition of LAO on TiO2-terminated STO substrates under different oxidizing conditions. MEIS and XPS indicated Sr/La and Al/Ti intermixing within several atomic layers at all studied interfaces. XPS and STEM revealed that La diffuses deeper than Al. Analysis of the MEIS data suggests inhomogeneous lateral distribution of the diffused elements. This is further supported by the observation of a large positive magneto-resistance at low temperatures. We discuss the role of lateral inhomogeneities on the formation of the electron gas at the LAO/STO interface.
更多查看译文
关键词
Electronic Structure,Oxide Interfaces,Two-Dimensional Electron Gases,Material Separation,Metal-Insulator Transition
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要