Advanced Organic Polymer for the Aggressive Scaling of Low-$k$ Materials

An advanced organic polymer material of k = 2.2 has been successfully integrated in Cu lines with dielectric spacing from 80 to 20 nm. Cu lines with both TaN/Ta barrier and no barrier were fabricated. Current-voltage (I-V) and time dependent dielectric breakdown (TDDB) measurements were performed to study the scalability of this material. In the case of TaN/Ta barrier, no TDDB degradation was observed at 100 degrees C as the dielectric spacing changed from 80 to 30 nm. In the case of no barrier, TDDB performance at 100 degrees C was better than that of SiO2 without a barrier. However, TDDB at 200 degrees C showed a clear degradation. In contrast, no such degradation was present when TaN/Ta barrier was used. (C) 2011 The Japan Society of Applied Physics