Overhauser Shift of the Electron Spin-Resonance Line of Si:P at the Metal-Insulator Transition: I. Integral Shift

The shift of the electron spin-resonance (ESR) line caused by a dynamic nuclear spin polarization is measured at low temperatures (5-11 K) and X-band frequency for phosphorus-doped silicon in the concentration range (2.7-7.3) x 10(18) cm(-3) covering the metal-insulator transition. The samples are also characterized by the temperature dependence of their microwave electrical conductivity. The g-factor, ESR linewidth and saturation behaviour are analysed as regards their dependence on the temperature and phosphorus concentration. The variation of the integral Overhauser shift of the ESR line with the temperature and phosphorus concentration is derived and discussed.