First result on biased CMOS MAPs-on-diamond devices

Recently a new type of device, the MAPS-on-diamond, obtained bonding a thinned to 25μm CMOS Monolithic Active Pixel Sensor to a standard 500μm pCVD diamond substrate, has been proposed and fabricated, allowing a highly segmented readout (10×10μm pixel size) of the signal produced in the diamond substrate. The bonding between the two materials has been obtained using a new laser technique to deliver the needed energy at the interface. A biasing scheme has been adopted to polarize the diamond substrate to allow the charge transport inside the diamond without disrupting the functionalities of the CMOS Monolithic Active Pixel Sensor.