A Reactively Matched 1.0–11.5 GHz Hybrid Packaged GaN High Power Amplifier
IEEE Microwave and Wireless Components Letters(2015)
摘要
An ultra-wideband PA using a single GaN die with resistive and reactive matching is fabricated and measured. The design includes series and shunt elements at the gate for stability and gain compensation, and uses two different substrates to obtain optimum Z 0 ranges for the matching networks. CW measurements at 31 dBm source power show 27-48% PAE and 35.1-37.4 dBm output power from 1.0 to 11.5 GHz...
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关键词
Gallium nitride,Bandwidth,Ultra wideband technology,Power amplifiers
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