Lapping and Polishing of Sapphire Wafer with Fixed Abrasive Pad

The processing technology of sapphire with a high material removal rate a good surface quality is critical for its applications. The experiment of sapphire lapping and polishing was carried out by using three different fixed abrasive pad (FAP). Their material removal rate (MRR) and surface roughness (Ra) were measured and analyzed. Results indicate that a MRR of 5.6μm/min reaches in rough lapping and a MRR of 0.4μm/min in fine lapping. The average surface roughness Ra of rough lapping and fine lapping is 142nm and 1.2nm respectively. The processing efficiency of sapphire wafer is effectively improved and a good surface quality is obtained when FAP adopted.