Free-Standing GaN Layer by Combination of Electrochemical and Photo-Electrochemical EtchingMarkleewoon jang[0]daewoo jeon[0]a y polyakov[0]hansu cho[0]jinhyeon yun[0]dongseob jojinwoo ju[0]jonghyeob baek[0]inhwan lee[0]Applied Physics Express, 2013.Cited by: 11|Bibtex|Views0|DOI:https://doi.org/10.7567/APEX.6.061001Other Links: academic.microsoft.comCode: Data: Full Text (Upload PDF)PPT (Upload PPT)SimilarReferenceCitedUpload PPTYour rating :0 TagsCommentsSubmit
