A defect-based compact modeling approach for the reliability of CMOS devices and integrated circuits

•We present a defect-based compact model for CMOS devices and circuit reliability.•The model captures the bias dependence of interface traps and oxide charges.•Modeling approach connects reliability physics and integrated circuit simulation.•Calculations of surface potential and induced voltage shifts verified with TCAD.•Corrects inaccuracies in typical fixed voltage (Vth-based) modeling techniques.