Material Engineering of GexTe100−x Compounds to Improve Phase-Change Memory Performances
Solid-state electronics(2013)
摘要
In this paper we provide a detailed physical and electrical characterization of Germanium Telluride compounds (GexTe100-x) targeting phase-change memory applications. Thin films of Germanium-rich as well as Tellurium-rich phase-change materials are deposited for material analysis (XRD, resistivity and optical characterization). GexTe100-x compounds are then integrated in lance-type analytical phase-change memory devices allowing for a thorough analysis of the switching characteristics, data retention and endurance performances. Tellurium-rich GeTe alloys exhibit stable programming characteristics and can sustain endurance up to 10(7) cycles, while Germanium-rich compounds show an unstable RESET state during repeated write/erase cycles, probably affected by Ge segregation. Finally we demonstrate that data retention is strongly improved departing from Ge50Te50 stoichiometric composition. (C) 2013 Elsevier Ltd. All rights reserved.
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关键词
Phase-Change Memory (PCM),Germanium Telluride (GeTe),Ge-rich,Te-rich
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