Material engineering of Ge x Te 100−x compounds to improve phase-change memory performances

G Navarro,Veronique Sousa,A Persico,N Pashkov,A Toffoli, J C Bastien,L Perniola,S Maitrejean,A Roule,Paola Zuliani,R Annunziata,B De Salvo

Solid-State Electronics（2013）

引用 23|浏览50

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摘要

•Tellurium-rich GeTe alloys exhibit stable programming characteristics and can sustain endurance up to 107cycles.•Germanium-rich compounds show an unstable RESET state during repeated write/erase cycles, probably affected by Ge segregation.•Strong improvement of data retention departing from Ge50Te50 stoichiometric composition.

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关键词

Phase-Change Memory (PCM),Germanium Telluride (GeTe),Ge-rich,Te-rich

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