A 19nm 112.8mm 2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface
Norihito Shibata, Keiji Kanda,Takeshi Hisada,Keisuke Isobe,Mitsuhisa Sato,Y Shimizu,Takahiko Shimizu,T Sugimoto, Takaaki Kobayashi,Kimio Inuzuka,Naoki Kanagawa,Yoji Kajitani,T Ogawa,Junichi Nakai,K Iwasa, Miki Kojima,T Suzuki,Youichi Suzuki,Shinichiro Sakai, Takashi Fujimura,Yasunori Utsunomiya, Takahiro Hashimoto,M Miakashi, Naoto Kobayashi,Masumi Inagaki, Yuriko Matsumoto,Shinichiro Inoue, Dongchen He,Yoshiko Honda,Junji Musha,Mina Nakagawa,Mareki Honma,Naofumi Abiko,Mitsumasa Koyanagi,M Yoshihara,Kazuhiko Ino, Midori Noguchi, Tomonori Kamei, Yuko Kato,S Zaitsu, Hiroyuki Nasu,Takuya Ariki,H Chibvongodze, Makoto Watanabe, Hui Ding,N Ookuma,R Yamashita,Guanfeng Liang,Gertjan Hemink,Farookh Moogat,C Trinh,Masaaki Higashitani,T Pham,Kazuki Kanazawa international solid-state circuits conference（2012）
关键词
throughput,programming,layout,nonvolatile memory,computer architecture
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