Transistors: High-Mobility Transistors Based on Large-Area and Highly Crystalline CVD-Grown MoSe2 Films on Insulating Substrates (Adv. Mater. 12/2016).

Advanced materials (Deerfield Beach, Fla.)(2016)

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摘要
On page 2316, M. A. Alam, S. K. Kim, and co-workers describe a 2D layered semiconductor used to fabricate a mechanically flexible, high-mobility thin-film transistor based on large-area and highly crystalline MoSe2 films grown by chemical vapor deposition (CVD). It is thought that such high-mobility materials will be indispensable for various future applications, such as high-resolution displays and human-centric soft electronics.
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关键词
MoSe2,insulating substrates,single-crystals,thin-film transistors,transition metal dichalcogenides
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