High-Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

Bilu Liu (刘碧录)

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Chenfei Shen

Haochuan Wan

Chongwu Zhou

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ACS nano, Volume 10, Issue 5, 2016, Pages 5153-5160.

Cited by: 50|Views4

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Keywords:

WSe2field-effect transistorheterojunctionsmobilitytungsten diselenideMore(2+)

Abstract:

Monolayer WSe2 is a two-dimensional (2D) semiconductor with a direct band gap, and it has been recently explored as a promising material for electronics and optoelectronics. Low field-effect mobility is the main constraint preventing WSe2 from becoming one of the competing channel materials for field-effect transistors (FETs). Recent resu...More

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