Session 7 overview: Nonvolatile memory solutions

2016 IEEE International Solid-State Circuits Conference (ISSCC)(2016)

引用 0|浏览20
暂无评分
摘要
Market demand for higher density, higher performance but lower price nonvolatile memory is increasing. This year, NAND Flash memories answer such demand with more evolved 3D technologies such as 48-layer stacking and peripherals under the cell array while PCRAM introduces an MLC-enabling scheme to double its density. Emerging memories pursue a system-level contribution for higher performance and lower energy consumption by replacing the volatile memory blocks.
更多
查看译文
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要