Insulation Issues in Punch-Through Biased Silicon Microstrip Sensors
IEEE Transactions Nuclear Science（2016）
摘要
During the qualification tests of the punch-through biased, AC-coupled microstrip sensors for the Inner Tracking System of the ALICE experiment at CERN, sensors fabricated by one of the suppliers showed erratic loss of strip insulation on p-side. This has been attributed to local surface inversion, facilitated by the very low oxide charge density-order of 1010 q/cm2-that can be obtained with (100) substrates. Numerical simulations providing quantitative insight into the phenomena, and electrical measurements that confirm the origin of the insulation problems are reported. A non-standard measurement technique suitable for investigating strip insulation issues is described.
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关键词
numerical analysis,particle tracks,silicon radiation detectors,AC-coupled microstrip sensor,ALICE experiment,CERN,electrical measurement,inner tracking system,insulation problem,local surface inversion,nonstandard measurement technique,numerical simulation,oxide charge density,silicon microstrip sensor,strip insulation,Microstrip silicon detectors,parasitic MOSFET,silicon radiation detectors,surface inversion
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