Symbol Shifting: Tolerating More Faults in PCM Blocks.
IEEE Transactions on Computers(2016)
摘要
Phase-change memory (PCM) has emerged as a candidate that overcomes the physical limitations faced by DRAM and NAND flash memory. While PCM has desirable properties in terms of scalability and density, it suffers from limited endurance. Repeated writes cause PCM cells to wear out and get permanently stuck at a specific value. Recovering from stuck-at faults through a proactive error correcting sch...
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关键词
Phase change materials,Error correction codes,Resistance,Random access memory,Encoding,Ash,Context
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