Recent Progress in Phase-Change Memory Technology.

Geoffrey W. Burr,Matthew J. BrightSky,Abu Sebastian,Huai-Yu Cheng,Jau-Yi Wu,SangBum Kim,Norma E. Sosa,Nikolaos Papandreou,Hsiang-Lan Lung,Haralampos Pozidis,Evangelos Eleftheriou,Chung Hon Lam

IEEE Journal on Emerging and Selected Topics in Circuits and Systems（2016）

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摘要

We survey progress in the PCM field over the past five years, ranging from large-scale PCM demonstrations to materials improvements for high-temperature retention and faster switching. Both materials and new cell designs that support lower-power switching are discussed, as well as higher reliability for long cycling endurance. Two paths towards higher density are discussed: through 3D integration ...

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关键词

Phase change materials,Computer architecture,Microprocessors,Resistance,Programming,Electrodes,Switches

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