Modelling of OPNMR phenomena using photon energy-dependent 〈Sz〉 in GaAs and InP.

•We have modeled OPNMR phenomena in two single-crystal semiconductors: GaAs, InP.•The model adds a revised expression for 〈Sz〉 to our earlier “penetration depth” model.•The photon energy-dependent 〈Sz〉 and penetration depth models both InP and GaAs well.•Theoretical optical transitions are shown with utility for future OPNMR studies.