Tracking BTI and HCI effects at circuit-level in adaptive systems

2016 14th IEEE International New Circuits and Systems Conference (NEWCAS)(2016)

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摘要
This work proposes a new method for measuring the performance loss of a processor due to aging (BTI and HCI). It is designed for any adaptive system incorporating in-situ delay monitors and local temperature sensors. To validate it, we developed a simplified circuit-level model for BTI/HCI effects in 28nm FD-SOI technology with a relative small error (<;1%). The correct operation of the proposed method has been verified in MATLAB/Simulink environment. It is shown that one can measure the circuit aging over a wide range of temperatures, the circuit aging being determined by the reduction of the maximum clock frequency.
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关键词
HCI effects,BTI effects,adaptive systems,performance loss,in-situ delay monitors,local temperature sensors,simplified circuit-level model,FD-SOI technology,MATLAB-Simulink environment,circuit aging,maximum clock frequency reduction,bias temperature instability,hot carrier injection
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