Realizing erase-free SLC flash memory with rewritable programming design

CODES+ISSS, pp. 7:1-7:10, 2016.

Cited by: 4|Bibtex|Views12|DOI:https://doi.org/10.1145/2968456.2968462
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Other Links: dblp.uni-trier.de|dl.acm.org|academic.microsoft.com

Abstract:

Over the past years, the adaptation of flash memory has seen a tremendous growth in a wide range of fields, with high-end applications demanding ever higher reliability and performance for storage devices. Even though a single-level-cell (SLC) flash memory can have a higher endurance and a lower access latency to better meet that requirem...More

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