Realizing erase-free SLC flash memory with rewritable programming design
CODES+ISSS, pp. 7:1-7:10, 2016.
EI
Abstract:
Over the past years, the adaptation of flash memory has seen a tremendous growth in a wide range of fields, with high-end applications demanding ever higher reliability and performance for storage devices. Even though a single-level-cell (SLC) flash memory can have a higher endurance and a lower access latency to better meet that requirem...More
Code:
Data:
Tags
Comments