Current Enhanced Double-Gate TFET with Source Pocket and Asymmetric Gate Oxide

In this paper, asymmetric gate oxide and source pocket double-gate tunneling FET (DG TFET) structure is proposed to enchance the current drive. Compared with conventional DG-TFET,the propsed TFET has steeper average subthreshold swing (SS), larger on currents, smaller supply voltage.The resason of improvements is mainly attributed to the enhanced tunneling electric field high-k gate oxide brings and larger tunneling area cuased by the source pocket.