Selective epitaxial growth of Al x Ga y In 1− x − y Sb

Using polycrystalline GaSb substrates and LPE techniques the orientation dependence of the growth rate was studied for AlGaInSb quaternary III–V alloys. On differently oriented substrate grains different growth rates have been observed. In extreme cases a definite inhibition of growth on particular orientations were detected. On twinned regions on one side thick epitaxial layer formed, however, on the other side no epitaxial layer was formed at all. Revealing the substrate grain structure by chemical etching and determining the orientations for both the substrate and epitaxial layer, one-to-one correspondence was found between the substrate structure and the overgrown epitaxial layer.