Effects of Contact Placement and Intra/Interlayer Interaction in Current Distribution of Black Phosphorus Sub-10-nm FET
IEEE Transactions on Electron Devices(2017)
摘要
Black phosphorus (BP) has been proposed as the channel material in the next generation ultrascaled CMOS devices. In order to gain insight into the current characteristics in 2-D layered materials, the current distribution of a few-layer BP Schottky barrier FET is investigated via state-of-the-art quantum device simulations. Approximately 40% of the total current was found to be concentrated in the...
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关键词
Couplings,Current distribution,Silicon,Atomic layer deposition,Logic gates,Current density,Graphene
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