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A 51.3-Mhz 21.8-Ppm/°c CMOS Relaxation Oscillator with Temperature Compensation.

IEEE transactions on circuits and systems II, Express briefs(2017)

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摘要
A 51.3-MHz 18-mu W 21.8-ppm/degrees C relaxation oscillator is presented in 90-nm CMOS. The proposed oscillator employs an integrated error feedback and composite resistors to minimize its sensitivity to temperature variations. For a temperature range from -20 degrees C to 100 degrees C, the fabricated circuit demonstrates a frequency variation less than +/- 0.13%, leading to an average frequency drift of 21.8 ppm/degrees C. As the supply voltage changes from 0.8 to 1.2 V, the frequency variation is +/- 0.53%. The measured rms jitter and phase noise at 1-MHz offset are 89.27 ps and -83.29 dBc/Hz, respectively.
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关键词
Integrated error feedback (IEF),low power,relaxation oscillator,temperature compensation
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