Small-signal model for the single-electron transistor: part I

A simple small-signal model of the single-electron transistor is presented. The terminal voltage variations are considered to be sufficiently small to result in small current variations that can be expressed using linearized relations. The derivation of such relations and the development of an equivalent circuit to represent them are presented. Two-port analysis of the small-signal circuit of the single-electron transistor is proposed and explained using various parameters such as impedance parameters, admittance parameters, and hybrid parameters. The variation of the magnitude of these parameters is plotted with respect to frequency. The transconductance and drain resistances and their frequency variation are also discussed. The effect of parasitic capacitance on the proposed small-signal model is also analyzed.