Array Termination Impacts in Advanced SRAM.

Randy W. Mann, Sandeep Puri,Sheng Xie,Daniel Marienfeld,Joseph Versaggi,Bianzhu Fu,Michael Gribelyuk, Ratheesh R. Thankalekshmi,Xiaoqiang Zhang,Hui Zang,Chad E. Weintraub

IEEE Transactions on Very Large Scale Integration (VLSI) Systems（2017）

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摘要

An essential goal of the static random access memory (SRAM) array termination design is to both terminate as well as maintain a homogeneous environment for the active edge cells in the array. Local layout effects (LLEs) in the array termination design can exert influence on the active array SRAM devices in close proximity to the termination region, which can lead to undesirable inhomogenuities in ...

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关键词

Random access memory,Logic gates,Layout,Stress,Arrays,Current measurement,Systematics

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