Design Of An Ultra-Low Pressure Sensor Based On The Growth Of Graphene On Silicon Dioxide Surface

In this paper, we present the theoretical analysis and calculation results for characterization of a graphene diaphragm applied for capacitive ultra-low pressure sensor structure, where a few layers of graphene diaphragm with radius of 8 mu m and total thickness of 2 nm, the graphene diaphragm is suspended over a circular cavity. In this paper, the graphene film was fabricated by an atmospheric-pressure chemical vapor deposition approach to directly form large-area uniform graphene film on silicon dioxide layer. Calculation results show that this capacitive pressure sensor is able to provide 164aF/Pa pressure sensitivity in an ultralow pressure range from 1Pa to 5Pa.