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Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors

Sensors(2017)SCI 3区

ON Semicond

Cited 10|Views10
Abstract
This paper describes recent process modifications made to enhance the performance of interline and electron-multiplying charge-coupled-device (EMCCD) image sensors. By use of MeV ion implantation, quantum efficiency in the NIR region of the spectrum was increased by 2×, and image smear was reduced by 6 dB. By reducing the depth of the shallow photodiode (PD) implants, the photodiode-to-vertical-charge-coupled-device (VCCD) transfer gate voltage required for no-lag operation was reduced by 3 V, and the electronic shutter voltage was reduced by 9 V. The thinner, surface pinning layer also resulted in a reduction of smear by 4 dB in the blue portion of the visible spectrum. For EMCCDs, gain aging was eliminated by providing an oxide-only dielectric under its multiplication phase, while retaining the oxide-nitride-oxide (ONO) gate dielectrics elsewhere in the device.
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interline CCD,EMCCD,quantum efficiency,low noise,gain aging
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要点】:本文介绍了通过MeV离子注入和结构优化提升干涉线和电子倍增电荷耦合器件(EMCCD)图像传感器性能的研究成果,实现了近红外量子效率翻倍和图像拖影的显著减少。

方法】:采用MeV离子注入技术提高量子效率,优化浅层光电二极管(PD)结构降低转移电压,以及调整EMCCD器件的介电层以消除增益老化。

实验】:通过实验,使用MeV离子植入技术对图像传感器进行处理,并在特定数据集上验证了性能提升,量子效率在近红外区域提高2倍,图像拖影减少6 dB;同时,浅层PD结构优化使得操作电压降低,表面固定层厚度减少导致蓝光区域的拖影减少4 dB;EMCCD的增益老化问题通过改变介电层结构得到解决。数据集名称未提及。