AZO Thin Film Transistor Performance Enhancement by Capping an Aluminum Layer

Yu Wen,Han Dedong,Dong Junchen,Cong Yingying,Cui Guodong,Wang Yi,Zhang Shengdong

IEEE Transactions on Electron Devices（2017）

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摘要

Coplanar bottom-gate aluminum-zinc-oxide (AZO) thin film transistors (TFTs) with aluminum (Al) capping layers were fabricated in this work. The influences of the Al capping layer thickness and the post-annealing condition on the performance of the AZO-TFTs were investigated. Results show that the performance of the AZO-TFTs are enhanced significantly by introducing the Al capping layer on back cha...

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关键词

Thin film transistors,Metals,Annealing,Crystallization,Substrates,Scanning electron microscopy

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