High-performance Ti-doped zinc oxide TFTs with double-layer gate dielectric fabricated at low temperature

Cui Guodong,Han Dedong,Cong Yingying,Dong Junchen,Yu Wen,Zhang Shengdong,Zhang Xing,Wang Yi

IEEE Electron Device Letters（2017）

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摘要

In this study, titanium (Ti)-doped zinc oxide thin film transistors (TiZO TFTs) with a double-layer gate dielectric were successfully fabricated on glass at low temperature. A stacked 7 nm-thick Al2O3/180 nm-thick SiO2 dielectric layer was used to improve the electrical performance of the TFTs, especially their leakage characteristics. Compared with the SiO2 single dielectric, the devices with the...

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关键词

Dielectrics,Thin film transistors,Aluminum oxide,Logic gates,Films,Performance evaluation,Leakage currents

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