Low Power Phase Change Memory with Vertical Carbon Nanotube Electrode

Wang Panni,Chen Yihan,Li Suwen,Raju Salahuddin,Wang Longyan,Zhang Lining,Lin Xinnan,Song Zhitang,Chan Mansun

IEEE Journal of the Electron Devices Society（2017）

引用 4|浏览45

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摘要

Phase change memory (PCM) formed by Ge2Sb2Te5 (GST) on vertical carbon nanotube (CNT) filled contact plug is demonstrated in this paper. In order to achieve compatibility with the underlying process, the CNTs are synthesized using nickel catalyst at a low temperature. Reasonable contact characteristics between the CNTs and GST are achieved without material compatibility problem. Due to the small c...

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关键词

Phase change materials,Electrodes,Metals,Programming,Resistance,Resistance heating,Silicides

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