A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory.
IEEE Journal of Solid-State Circuits（2018）
摘要
A 64-word-line-stacked 512-Gb 3-b/cell 3-D NAND flash memory is presented. After briefly examining the challenges that occur to a stack, several technologies are suggested to resolve the issues. For performance enhancement, a novel program method hiding two-page data loading time is presented. This paper also discusses an electrical annealing improving reliability characteristic by removing holes ...
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关键词
Loading,Annealing,Logic gates,Reliability,Niobium,Programming,Built-in self-test
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