Towards High-Performance Polarity-Controllable Fets With 2d Materials

As scaling of conventional silicon-based electronics is reaching its ultimate limit, two-dimensional semiconducting materials of the transition-metal-dichalcogenides family, such as MoS2 and WSe2, are considered as viable candidates for next-generation electronic devices. Fully relying on electrostatic doping, polarity-controllable devices, that use additional gate terminals to modulate the Schottky barriers at source and drain, can strongly take advantages of 2D materials to achieve high on/off ratio and low leakage floor. Here, we provide an overview of the latest advances in 2D material processes and growth. Then, we report on the experimental demonstration of polarity-controllable devices fabricated on 2D-WSe2 and study the scaling trends of such devices using ballistic self-consistent quantum simulations. Finally, we discuss the circuit-level opportunities of such technology.