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A 2.7 Pj/cycle 16 MHz, 0.7 $\mu\text{w}$ Deep Sleep Power ARM Cortex-M0+ Core SoC in 28 Nm FD-SOI

IEEE JOURNAL OF SOLID-STATE CIRCUITS(2018)

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摘要
The design of ultra-low-voltage microcontroller (MCU) systems with high energy-efficiency operations is a key concept to achieve fully autonomous energy-harvesting powered Internet-of-Things applications. In this paper, a system-on-chip (SoC) is presented, embedding an ARM (R) Cortex (R) -M0+ MCU, 2x4 KB SRAM, an ultra-low power frequency synthesizer, a custom power switch, and a power management unit enabling the active and sleep modes. The 28 nm fully depleted silicon-on-insulator (FD-SOI) technology has been used to fabricate the device. The whole system operates at a fixed voltage of 0.5 V, and can switch from active and sleep/deep sleep modes, adjusting its frequency from 16 to 8 MHz or 32 kHz in one cycle upon energy availability. Silicon measurements report an SoC's power consumption of 2.7 pJ/cycle at 16 MHz during active mode, and a total power consumption of 0.7 mu W during deep sleep mode. By combining frequency and power modes switching with extra reverse body-biasing, the system power consumption is drastically reduced by 2x and 61x in, respectively, sleep and deep sleep modes.
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关键词
28 nm fully depleted silicon-on-insulator (FD-SOI),body-biasing,digital design,energy-efficiency,microcontroller (MCU),minimum energy point,near-zeropower,power management,ultra-low voltage (ULV),ultra-low power (ULP)
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