14NM FinFET 1.5MB Embedded High-K Charge Trap Transistor One Time Programmable Memory Using Dynamic Adaptive Programming

Eric Hunt-Schroeder,Darren Anand,John Fifield,Mark Jacunski,Michael Roberge,Dale Pontius,Kevin Batson,Toshiaki Kirihata

2018 IEEE Symposium on VLSI Circuits（2018）

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摘要

An 8K×192b One Time Programmable Memory (OTPM) is designed and manufactured in a 14nm FinFET technology without process adders or additional masks. A Differential Current Sense Amplifier (DCSA) and dynamic adaptive 192b parallel programming results in a <; 3 PPM bit error rate, and supports a 10 year 105°C retention specification.

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关键词

OTPM,charge trap transistor,current sensing

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