DL-RSIM: A Simulation Framework to Enable Reliable ReRAM-based Accelerators for Deep Learning

2018 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)(2018)

引用 57|浏览86
暂无评分
摘要
Memristor-based deep learning accelerators provide a promising solution to improve the energy efficiency of neuromorphic computing systems. However, the electrical properties and crossbar structure of memristors make these accelerators error-prone. To enable reliable memristor-based accelerators, a simulation platform is needed to precisely analyze the impact of non-ideal circuit and device properties on the inference accuracy. In this paper, we propose a flexible simulation framework, DL-RSIM, to tackle this challenge. DL-RSIM simulates the error rates of every sum-of-products computation in the memristor-based accelerator and injects the errors in the targeted TensorFlow-based neural network model. A rich set of reliability impact factors are explored by DL-RSIM, and it can be incorporated with any deep learning neural network implemented by TensorFlow. Using three representative convolutional neural networks as case studies, we show that DL-RSIM can guide chip designers to choose a reliability-friendly design option and develop reliability optimization techniques.
更多
查看译文
关键词
TensorFlow-based neural network model,nonideal circuit,crossbar structure,reliable ReRAM-based accelerators,reliability optimization techniques,reliability-friendly design option,representative convolutional neural networks,deep learning neural network,reliability impact factors,memristor-based accelerator,sum-of-products computation,error rates,flexible simulation framework,device properties,simulation platform,reliable memristor-based accelerators,electrical properties,neuromorphic computing systems,energy efficiency,memristor-based deep learning accelerators,DL-RSIM
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要