Gate-Controlled Graphene-Silicon Schottky Junction Photodetector.

Various photodetectors showing extremely high photoresponsivity have been frequently reported, but many of these photodetectors could not avoid the simultaneous amplification of dark current. A gate-controlled graphene-silicon Schottky junction photodetector that exhibits a high on/off photoswitching ratio (approximate to 10(4)), a very high photoresponsivity (approximate to 70 A W-1), and a low dark current in the order of mu A cm(-2) in a wide wavelength range (395-850 nm) is demonstrated. The photoresponsivity is approximate to 100 times higher than that of existing commercial photodetectors, and 7000 times higher than that of graphene-field-effect transistor-based photodetectors, while the dark current is similar to or lower than that of commercial photodetectors. This result can be explained by a unique gain mechanism originating from the difference in carrier transport characteristics of silicon and graphene.