A 2-5GHz Wideband Inductorless Low Noise Amplifier for LTE and Intermediate-Frequency-Band 5G Applications.

This paper presents a wideband inductorless noise-cancelling balun LNA with two gain modes, low NF, and high-linearity for LTE and intermediate-frequency-band (eg. 3.3-3.6 GHz, 4.8-5 GHz) 5G applications fabricated in 65 nm CMOS. The proposed LNA is bonding tested and exhibits a minimum NF of 2.2 dB and maximum IIP3 of -3.5 dBm. Taking advantage of an off-chip bias inductor in CG stage and a cross-coupled buffer, the LNA occupies high operation frequency up to 5 GHz with remarkable linearity and NF as well as compact area.