Investigation Of The Pulsed-Iv Degradation Mechanism Of Gan-Hemt Under High Temperature Storage Tests
2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)(2018)
摘要
The purpose of this study is to investigate the physical mechanism of pulsed-IV degradation under high temperature storage tests. Using the measurements of the pulsed S-parameters immediately after the voltage stress was applied to the GaN-HEMT, we carried out the delay time analysis. As a result, we found that the so-called "virtual gate" region extended toward the drain electrode due to high temperature storage. From this result, we concluded that the electron tunnel injection probability at the gate edge increased and degraded the pulsed-IV characteristics.
更多查看译文
关键词
delay time analysis, GaN-HEMT, high temperature storage test, pulsed-IV, pulsed S-parameters
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要