Cubic Phase Light Emitters Hetero-integrated on Silicon

IEEE Photonics Conference : [proceedings]. IEEE Photonics Conference, Volume 2017, 2017, Pages 35-36.

Cited by: 0|Bibtex|Views2|DOI:https://doi.org/10.1109/IPCon.2017.8115994
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Other Links: pubmed.ncbi.nlm.nih.gov|academic.microsoft.com

Abstract:

GaN emitters have historically been of hexagonal phase due to natural crystallization. Here we introduce a cubic phase GaN emitter technology that is polarization-free via cointegration on cheap and scalable CMOS-compatible Si(100) substrate.

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