Cubic phase light emitters hetero-integrated on silicon

2017 IEEE Photonics Conference (IPC)（2017）

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摘要

GaN emitters have historically been of hexagonal phase due to natural crystallization. Here we introduce a cubic phase GaN emitter technology that is polarization-free via cointegration on cheap and scalable CMOS-compatible Si(100) substrate.

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关键词

CMOS-compatible Si(100) substrate,polarization-free via cointegration,cubic phase GaN emitter technology,cubic phase light emitters heterointegrated on silicon,natural crystallization,GaN,Si

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