High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

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Abstract:

Monolayer WSe2 is a two dimensional (2D) semiconductor with a direct bandgap, and it has been recently explored as a promising material for electronics and optoelectronics. Low field effect mobility is the main constraint preventing WSe2 from becoming one of the competing channel materials for field-effect transistors (FETs). Recent res...More

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