Ge Nfet With High Electron Mobility And Superior Pbti Reliability Enabled By Monolayer-Si Surface Passivation And La-Induced Interface Dipole Formation

Monolayer-Si-passivated Ge nFETs with high electron mobility (175 cm(2)/Vs at Ns= 5x10(12) cm(-2)) and superior PBTI reliability (max. V-ov = vertical bar V-g-V-th vertical bar of 0.28V at 125 degrees C) at 0.95-nm-EOT are demonstrated on a 300 mm Si wafer platform. The electron mobility is increased by optimizing the Si thickness while significant improvement in PBTI reliability is realized by band engineering using La-induced interface dipole and defect passivation using laser annealing. This is a significant step forward for the introduction of Ge nFET as high mobility device in advanced technology nodes.