Dry etching for Germanium waveguides by using CHF3 inductively coupled plasma
2015 20th Microoptics Conference (MOC)(2015)
摘要
Dry etching for Ge waveguide has been researched by using inductively coupled plasma technique with CHF
3
gas. It realizes a high selectivity of 5:1 against regular photoresist mask. Moreover, anisotropic etching without under-cut has been successfully realized with an etched siclewall angle of 85 degree with an etching rate of 190 nm/min.
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关键词
dry etching,germanium waveguides,CHF3 inductively coupled plasma,inductively coupled plasma technique,regular photoresist mask,anisotropic etching,etching rate,Ge
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