Impact Of Buffer Leakage On Intrinsic Reliability Of 650v Algan/Gan Hemts

Peter Moens,A. Banerjee,Michael J. Uren,Matteo Meneghini,Serge Karboyan,Indranil Chatterjee,Piet Vanmeerbeek, M. Casar,C. Liu,Ali Salih,Enrico Zanoni,Gaudenzio Meneghesso,Martin Kuball,M. Tack

2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2015）

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摘要

The role of buffer traps (identified as CN acceptors through current DLTS) in the off-state leakage and dynamic Ron of 650V rated GaN-on-Si power devices is investigated. The dynamic Ron is strongly voltage-dependent, due to the interplay between the dynamic properties of the CN traps and the presence of space-charge limited current components. This results in a complete suppression of dyn Ron degradation under HTRB conditions between 420V and 850V.

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关键词

buffer leakage,intrinsic reliability,buffer traps,CN acceptors,DLTS,off-state leakage,dynamic Ron degradation,gallium nitride-on-silicon power devices,dynamic properties,CN traps,space-charge limited current components,HTRB condition,voltage 650 V,AlGaN-GaN,Si

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