Suppression of boron diffusion using carbon co-implantation in DRAM

Suk Hun Lee,Se Geun Park, Shin Deuk Kim,Hyuck-Chai Jung,Il Gweon Kim,Dong-Ho Kang,Dae Jung Kim,Kyu Pil Lee,Joo Sun Choi,Jung-Woo Baek,Moonsuk Choi,Yongkook Park,Changhwan Choi,Jin-Hong Park

Materials Research Bulletin（2016）

引用 5|浏览24

暂无评分

摘要

•The impact of Ge+C co-implantation on dopant diffusion was investigated.•DIBL and VTH variation was improved by Ge+C co-implantation.•The VTH mismatch and the write characteristics were improved in the DRAM device.

查看译文

关键词

A. Semiconductor,A. Electronic materials,D. Diffusion,D. Defect,D. Electrical properties

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要