A Stand-Alone, Physics-Based, Measurement-Driven Model and Simulation Tool for Random Telegraph Signals Originating From Experimentally Identified MOS Gate-Oxide Defects

Investigating random telegraph signals (RTS) observed in MOS devices is important for studying the gate-oxide defect characteristics and developing simulation and modeling tools in highly scaled devices. In this paper, we are presenting a comprehensive, variable-temperature, single-to-multitrap scalable RTS model and a simulation tool (RTSSIM) based on the first principles, and supported by experi...